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Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration., , , , , , , , , and 2 other author(s). IRPS, page 1-5. IEEE, (2021)Frequency dependant gate oxide TDDB model., , , , , , and . IRPS, page 25-1. IEEE, (2022)Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications., and . Microelectron. Reliab., 41 (9-10): 1307-1312 (2001)Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs., , , , , , , , , and 2 other author(s). ESSDERC, page 299-302. IEEE, (2021)Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology., , , , , , and . IRPS, page 1-5. IEEE, (2019)First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications., , , , , , , , , and 4 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2024)Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications., , , , , , , , , and 24 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2024)BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations., , , , , , , and . IRPS, page 1-5. IEEE, (2021)Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications., , , , , , , and . IRPS, page 4. IEEE, (2022)CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes., , , , , and . ESSDERC, page 405-408. IEEE, (2014)