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SRAM Voltage and Current Sense Amplifiers in sub-32nm Double-gate CMOS Insensitive to Process Variations and Transistor Mismatch.

P. Nasalski, A. Makosiej, B. Giraud, A. Vladimirescu, and A. Amara. ISCAS, page 3170-3173. IEEE, (2009)

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Andrei Munk

Andrei Belitski

Andrei Lehmann

Andrei Negoescu

Andrei Verbovsky

Other publications of authors with the same name

Ultra-Low-Power compact TFET Flip-Flop design for high-performance low-voltage applications.N. Gupta, A. Makosiej, A. Vladimirescu, A. Amara, and C. Anghel. ISQED, page 107-112. IEEE, (2016)Tunnel FET based ultra-low-leakage compact 2T1C SRAM.N. Gupta, A. Makosiej, A. Vladimirescu, A. Amara, and C. Anghel. ISQED, page 71-75. IEEE, (2017)SPINE (SPIN Emulator) - A Quantum-Electronics Interface Simulator.J. van Dijk, A. Vladimirescu, M. Babaie, E. Charbon, and F. Sebastiano. IWASI, page 23-28. IEEE, (2019)The Synergy SPICE - Compact Models.A. Vladimirescu. ESSDERC, page 182-185. IEEE, (2019)Bulk and FDSOI SRAM resiliency to radiation effects.W. Bartra, R. da Luz Reis, C. Anghel, and A. Vladimirescu. MWSCAS, page 655-658. IEEE, (2014)The Next Dawn for CMOS: Cryogenic ICs for Quantum Computing.A. Vladimirescu. IWASI, page 98. IEEE, (2023)Effect of Illumination Intensity on LED Based Visible Light Communication System.D. Shi, J. Li, Y. Liu, L. Shi, Y. Huang, Z. Wang, X. Zhang, and A. Vladimirescu. BMSB, page 1-4. IEEE, (2020)3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications.N. Gupta, A. Makosiej, A. Vladimirescu, A. Amara, and C. Anghel. DATE, page 361-366. IEEE, (2016)Characterization and Model Validation of Mismatch in Nanometer CMOS at Cryogenic Temperatures.P. Hart, J. van Dijk, M. Babaie, E. Charbon, A. Vladimirescu, and F. Sebastiano. ESSDERC, page 246-249. IEEE, (2018)Sub-picowatt retention mode TFET memory for CMOS sensor processing nodes.A. Vladimirescu, C. Anghel, A. Amara, N. Gupta, and A. Makosiej. IWASI, page 266-270. IEEE, (2015)

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Disambiguation of "Vladimirescu, Andrei"

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SRAM Voltage and Current Sense Amplifiers in sub-32nm Double-gate CMOS Insensitive to Process Variations and Transistor Mismatch.

Please choose a person to relate this publication to

Andrei Munk

Andrei Belitski

Andrei Lehmann

Andrei Negoescu

Andrei Verbovsky

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Vladimirescu, Andrei"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML SRAM Voltage and Current Sense Amplifiers in sub-32nm Double-gate CMOS Insensitive to Process Variations and Transistor Mismatch.

Please choose a person to relate this publication to

Andrei Munk

Andrei Belitski

Andrei Lehmann

Andrei Negoescu

Andrei Verbovsky

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

SRAM Voltage and Current Sense Amplifiers in sub-32nm Double-gate CMOS Insensitive to Process Variations and Transistor Mismatch.