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Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors.

, , , , , и . IRPS, стр. 1-5. IEEE, (2020)

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Natale Barletta

Natale Bizzotto

Giovanni Natale

Nicole Natale

Herbert Natale

 

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An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation., , , и . ICECS, стр. 562-565. IEEE, (2019)Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate., , , , , , , и . IRPS, стр. 1-6. IEEE, (2024)Characterization and Modeling of BTI in SiC MOSFETs., , , , , , , , и . ESSDERC, стр. 82-85. IEEE, (2019)Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors., , , , , и . IRPS, стр. 1-5. IEEE, (2020)Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition., , , , , , , и . IRPS, стр. 10. IEEE, (2022)TCAD predictions of hot-electron injection in p-type LDMOS transistors., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 86-89. IEEE, (2019)Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide., , , , , , , и . Microelectron. Reliab., (2017)A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter., , , и . ESSDERC, стр. 392-395. IEEE, (2022)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-10. IEEE, (2019)