( en | de | ru )

 

Disambiguation of "Lu, Chih-Yuan"

Author of the publication

copydeleteadd this publication to your clipboard
In-Memory Approximate Computing Architecture Based on 3D-NAND Flash Memories.

, , , , , , , , and . VLSI Technology and Circuits, page 270-271. IEEE, (2022)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Yuan Lü

Fang-yüan Lü

Matei Chihaia

Walid Shehab Chihab

Cristian Ionuţ Chihaia

 

Other publications of authors with the same name

Electrical method to localize the high-resistance of nanoscale CoSi2 word-line for OTP memories., , , , , , , and . IRPS, page 6. IEEE, (2018)In-Memory Approximate Computing Architecture Based on 3D-NAND Flash Memories., , , , , , , , and . VLSI Technology and Circuits, page 270-271. IEEE, (2022)First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures., , , , , , , and . IRPS, page 7. IEEE, (2022)Introduction of Non-Volatile Computing In Memory (nvCIM) by 3D NAND Flash for Inference Accelerator of Deep Neural Network (DNN) and the Read Disturb Reliability Evaluation : (Invited Paper)., , , and . IRPS, page 1-6. IEEE, (2020)Reliability Assessment for an In-3D-NAND Approximate Searching Solution., , , , , , , and . IRPS, page 1-6. IEEE, (2024)Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory., , , , , , , , , and 1 other author(s). IRPS, page 6-1. IEEE, (2018)Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method., , , , , , , and . IRPS, page 6. IEEE, (2018)Chip Demonstration of a High-Density (43Gb) and High-Search-Bandwidth (300Gb/s) 3D NAND Based In-Memory Search Accelerator for Ternary Content Addressable Memory (TCAM) and Proximity Search of Hamming Distance., , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits., , , , , and . IMW, page 1-4. IEEE, (2021)Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution., , , , , , , , and . IRPS, page 1-6. IEEE, (2020)