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Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode., , , , , , , , , and 3 other author(s). VLSI Technology and Circuits, page 312-313. IEEE, (2022)Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability., , , , , , , , , and 2 other author(s). IMW, page 1-4. IEEE, (2021)Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory., , , , , , , , , and 4 other author(s). IRPS, page 7. IEEE, (2024)Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering., , , , , , , , , and . IMW, page 1-4. IEEE, (2023)Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2023)Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors., , , , , , , , , and 1 other author(s). IRPS, page 10-1. IEEE, (2022)Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification., , , , , , , , , and 1 other author(s). IMW, page 1-4. IEEE, (2024)