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Novel level-identifying circuit for flash multilevel memories., , , and . IEEE J. Solid State Circuits, 33 (7): 1090-1095 (1998)Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics., , , , , , , , and . CoRR, (2024)Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness., , , , and . Microelectron. Reliab., 51 (5): 919-924 (2011)Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique., , , , and . Microelectron. Reliab., 47 (4-5): 508-512 (2007)Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors., , , , , , , , , and 1 other author(s). IRPS, page 10-1. IEEE, (2022)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , and . IMW, page 1-4. IEEE, (2021)Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification., , , , , , , , , and 1 other author(s). IMW, page 1-4. IEEE, (2024)Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND., , , , , , , and . IMW, page 1-4. IEEE, (2023)Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks., , , , , , , , , and . IRPS, page 12-1. IEEE, (2022)Doped GeSe materials for selector applications., , , , , , , , , and 1 other author(s). ESSDERC, page 168-171. IEEE, (2017)