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Tunable Voltage-Mode Subthreshold CMOS Neuron., , , и . ISVLSI, стр. 252-257. IEEE, (2020)A Novel TFET 8T-SRAM Cell with Improved Noise Margin and Stability., , , и . DDECS, стр. 39-44. IEEE, (2018)Energy-Efficient Spintronic-Based Neuromorphic Computing System Using Current Mode Track and Termination Circuit., , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 42 (9): 2915-2923 (сентября 2023)Flexible Energy-Efficient Implementation of Adaptive Spiking Encoder for Neuromorphic Processors., , , , и . ISCAS, стр. 1-5. IEEE, (2021)A low-noise high-linear wide dynamic-range MTJ-based magnetic field sensor., , , , , , , , и . NorCAS, стр. 1-4. IEEE, (2023)Spin-Orbit Torque Flash Analog-to-Digital Converter., , , , , , и . CoRR, (2023)Symmetric write operation for 1T-1MTJ STT-RAM cells using negative bitline technique., , , и . SoCC, стр. 215-220. IEEE, (2015)A 53GΩ@DC Input Impedance Multi-Channel Neural Recording Amplifier with 0.77 μVrms Input-Referred Noise for Deep Brain Implants., , , , и . CICC, стр. 1-2. IEEE, (2021)Comparative study of FinFETs versus 22nm bulk CMOS technologies: SRAM design perspective., , , и . SoCC, стр. 449-454. IEEE, (2014)A Low-Noise High Input Impedance Analog Front-End Design for Neural Recording Implant., , , , , и . ICECS, стр. 887-890. IEEE, (2019)