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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability.

, , , , , , , , , and . IRPS, page 1-6. IEEE, (2023)

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Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device., , , , , , and . AICAS, page 145-148. IEEE, (2020)Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors., , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 71 (1): 395-399 (January 2024)Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization., , , , , , , , , and 4 other author(s). IRPS, page 1-6. IEEE, (2021)1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing., , , , , , , , , and 10 other author(s). IMW, page 1-4. IEEE, (2022)A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications., , , , , , , , and . ESSDERC, page 264-267. IEEE, (2013)A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification., , , , , , , and . IMW, page 1-4. IEEE, (2021)Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2021)Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability., , , , , , , , , and . IRPS, page 1-6. IEEE, (2023)On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations., , , , , , , , , and 1 other author(s). ESSDERC, page 170-173. IEEE, (2013)Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors., , , , , , and . CoRR, (2023)