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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability.

, , , , , , , , , and . IRPS, page 1-6. IEEE, (2023)

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Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device., , , , , , and . AICAS, page 145-148. IEEE, (2020)Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array., , , , , , , , , and 1 other author(s). IMW, page 1-4. IEEE, (2023)Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations., , , , , , , , , and . IRPS, page 8-1. IEEE, (2022)Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability., , , , , , , , , and . IRPS, page 1-6. IEEE, (2023)On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations., , , , , , , , , and 1 other author(s). ESSDERC, page 170-173. IEEE, (2013)Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors., , , , , , and . CoRR, (2023)High temperature stability embedded ReRAM for 2x nm node and beyond., , , , , , , , , and 9 other author(s). IMW, page 1-4. IEEE, (2022)Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications., , , , , , , , , and 2 other author(s). IRPS, page 2-1. IEEE, (2018)A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification., , , , , , , and . IMW, page 1-4. IEEE, (2021)Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors., , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 71 (1): 395-399 (January 2024)