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Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability., , , , и . Microelectron. Reliab., 45 (9-11): 1299-1304 (2005)Metal reliability mechanisms in Ruthenium interconnects., , , , , , , , и . IRPS, стр. 1-7. IEEE, (2020)Low-Frequency Noise Measurements to Characterize Cu-Electromigration Down to 44nm Metal Pitch., , , , и . IRPS, стр. 1-6. IEEE, (2019)Stress mitigation of 3D-stacking/packaging induced stresses., , , , , , , , и . IRPS, стр. 4. IEEE, (2018)Reliability of a DME Ru Semidamascene scheme with 16 nm wide Airgaps., , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)Impact of via density and passivation thickness on the mechanical integrity of advanced Back-End-Of-Line interconnects., , , , , , , , , и 1 other автор(ы). Microelectron. Reliab., (2017)Insights into metal drift induced failure in MOL and BEOL., , , , , , и . IRPS, стр. 3. IEEE, (2018)Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2020)Design considerations for the mechanical integrity of airgaps in nano-interconnects under chip-package interaction; a numerical investigation., , , , , и . Microelectron. Reliab., (2016)Design Technology co-optimization for N10., , , , , , , , , и 18 other автор(ы). CICC, стр. 1-8. IEEE, (2014)