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Programmable cell array using rewritable solid-electrolyte switch integrated in 90nm CMOS., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 228-229. IEEE, (2011)0.5-V Highly Power-Efficient Programmable Logic using Nonvolatile Configuration Switch in BEOL., , , , , , , и . FPGA, стр. 236-239. ACM, (2015)Low-power programmable-logic cell arrays using nonvolatile complementary atom switch., , , , , , и . ISQED, стр. 330-334. IEEE, (2014)A 90nm 12ns 32Mb 2T1MTJ MRAM., , , , , , , , , и 10 other автор(ы). ISSCC, стр. 462-463. IEEE, (2009)Sensor Signal Processing Using High-Level Synthesis With a Layered Architecture., , , , , , , , , и 4 other автор(ы). IEEE Embed. Syst. Lett., 10 (4): 119-122 (2018)NV-SRAM: a nonvolatile SRAM with back-up ferroelectric capacitors., , , , , , , , , и . CICC, стр. 65-68. IEEE, (2000)FeRAM device and circuit technologies fully compatible with advanced CMOS., , , , , , , , , и 2 other автор(ы). CICC, стр. 171-178. IEEE, (2001)Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM., , , , , , , , , и . VLSIC, стр. 86-. IEEE, (2015)NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors., , , , , , , , , и . IEEE J. Solid State Circuits, 36 (3): 522-527 (2001)An embedded FeRAM macro cell for a smart card microcontroller., , , , , , , , , и 3 other автор(ы). CICC, стр. 439-442. IEEE, (1998)