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Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.

J. Huo, W. Huang, F. Zhang, S. Zhang, W. Gan, Q. Huo, Y. Cai, Q. Zhang, Y. Li, H. Zhu, H. Yin, and Z. Wu. Microelectron. J., (2021)

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Huilong Huang

Yiping Zhu

Junjiang Zhu

Yongming Zhu

Zhu Dai

Other publications of authors with the same name

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.J. Huo, W. Huang, F. Zhang, S. Zhang, W. Gan, Q. Huo, Y. Cai, Q. Zhang, Y. Li, H. Zhu and 2 other author(s). Microelectron. J., (2021)Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits.W. Huang, H. Zhu, Y. Zhang, Z. Wu, K. Jia, X. Yin, Y. Li, C. Li, X. Ai, Q. Huo and 1 other author(s). Microelectron. J., (2021)Data Augmentation Algorithm Based on Local Dynamic Transformation.H. Zhu, J. Zhang, L. Hu, C. Li, M. Shan, and Q. Duan. AIIPCC, page 398-404. IEEE, (2022)Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer.X. Xie, H. Zhu, M. Zhang, D. Bi, Z. Hu, Z. Zhang, and S. Zou. IEICE Electron. Express, 16 (21): 20190454 (2019)A novel self-recoverable and triple nodes upset resilience DICE latch.D. Lin, Y. Xu, X. Li, X. Xie, J. Jiang, J. Ren, H. Zhu, Z. Zhang, and S. Zou. IEICE Electron. Express, 15 (19): 20180753 (2018)Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.W. Luo, H. Yang, W. Wang, Y. Xu, B. Tang, S. Ren, H. Xu, Y. Wang, L. Qi, J. Yan and 4 other author(s). Microelectron. Reliab., (2016)Overshoot stress impact on HfO2 high-κ layer dynamic SILC.G. Wan, T. Duan, S. Zhang, L. Jiang, B. Tang, C. Zhao, H. Zhu, and H. Yu. ASICON, page 1-4. IEEE, (2015)The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level.W. Huang, H. Zhu, K. Jia, Z. Wu, X. Yin, Q. Huo, and Y. Zhang. CoRR, (2020)Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.H. Yang, L. Qi, Y. Zhang, B. Tang, Q. Liu, H. Xu, X. Ma, X. Wang, Y. Li, H. Yin and 5 other author(s). Sci. China Inf. Sci., 63 (2): 129403 (2020)

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Disambiguation of "Zhu, Huilong"

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Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.

Please choose a person to relate this publication to

Huilong Huang

Yiping Zhu

Junjiang Zhu

Yongming Zhu

Zhu Dai

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zhu, Huilong"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.

Please choose a person to relate this publication to

Huilong Huang

Yiping Zhu

Junjiang Zhu

Yongming Zhu

Zhu Dai

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.