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Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks., , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Variability in Resistive Memories., , , , , , , , , and 10 other author(s). Adv. Intell. Syst., (June 2023)Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation., , , , , , , and . DCIS, page 1-6. IEEE, (2020)An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance., , , , and . DCIS, page 1-6. IEEE, (2022)Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2020)Hardware implementation of self-organizing maps using memristors, a simulation study., , and . DCIS, page 1-6. IEEE, (2022)Modelling Resistive Random Access Memories by means of Functional Principal Component Analysis., , , and . MDA, page 64-73. ibai Publishing, (2017)Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors., , , , , and . IRPS, page 1-4. IEEE, (2020)Homogeneity problem for basis expansion of functional data with applications to resistive memories., , , , and . Math. Comput. Simul., (2021)Time series modeling of the cycle-to-cycle variability in h-BN based memristors., , , , , , , , and . IRPS, page 1-5. IEEE, (2021)