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Disambiguation of "Zhao, Qing-Tai"

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Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing.

, , , , , , and . ESSCIRC, page 121-124. IEEE, (2022)

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Qing Zhao

Zhao Zhao

Qing Shengzu

Lan Qing

Li Qing

 

Other publications of authors with the same name

Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors., , , , and . MIXDES, page 31-36. IEEE, (2023)Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM., , , , , , , and . ESSDERC, page 42-45. IEEE, (2017)NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future., , , , , , , , , and 23 other author(s). DATE, page 957-962. IEEE, (2022)Experimental demonstration of improved analog device performance in GAA-NW-TFETs., , , , , and . ESSDERC, page 178-181. IEEE, (2014)Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory., , , , , , , , and . ISCAS, page 2792-2796. IEEE, (2022)Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor., , , , , , and . ESSDERC, page 268-271. IEEE, (2017)Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing., , , , , , and . ESSCIRC, page 121-124. IEEE, (2022)High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain., , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs., , , , , , , , , and 2 other author(s). ESSDERC, page 256-259. IEEE, (2013)GeSn Vertical Gate-all-around Nanowire n-type MOSFETs., , , , , , , , and . ESSDERC, page 364-367. IEEE, (2022)