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Disambiguation of "Borga, Matteo"

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Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

, , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)

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Magnus Borga

Erhard Borgards

Thomas Borgard

Ravishankar Bhaskarrao Borgaonkar

Hans-Udo Borgaes

 

Other publications of authors with the same name

Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology., , , , , , and . PRIME, page 273-276. IEEE, (2022)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs., , , , , , , , and . Microelectron. Reliab., (2018)Vertical stack reliability of GaN-on-Si buffers for low-voltage applications., , , , , , , , , and . IRPS, page 1-8. IEEE, (2021)µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate., , , , , , , , and . IRPS, page 1-6. IEEE, (2019)Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate., , , , , , , and . IRPS, page 1-6. IEEE, (2024)High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps., , , , , , , , , and 1 other author(s). IRPS, page 1-6. IEEE, (2023)Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs., , , , , , , , , and 1 other author(s). IRPS, page 20-1. IEEE, (2022)Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition., , , , , , , and . IRPS, page 10. IEEE, (2022)