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17.5 A 3T1R nonvolatile TCAM using MLC ReRAM with Sub-1ns search time., , , , , , , , , and 1 other author(s). ISSCC, page 1-3. IEEE, (2015)Considerations Of Integrating Computing-In-Memory And Processing-In-Sensor Into Convolutional Neural Network Accelerators For Low-Power Edge Devices., , , , , , , , , and 3 other author(s). VLSI Circuits, page 166-. IEEE, (2019)A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors., , , , , , , , , and 7 other author(s). ISSCC, page 494-496. IEEE, (2018)A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors., , , , , , , , , and 12 other author(s). ISSCC, page 388-390. IEEE, (2019)14.3 A 65nm Computing-in-Memory-Based CNN Processor with 2.9-to-35.8TOPS/W System Energy Efficiency Using Dynamic-Sparsity Performance-Scaling Architecture and Energy-Efficient Inter/Intra-Macro Data Reuse., , , , , , , , , and 1 other author(s). ISSCC, page 234-236. IEEE, (2020)5.9 A 0.8V Multimode Vision Sensor for Motion and Saliency Detection with Ping-Pong PWM Pixel., , , , , , , , , and 3 other author(s). ISSCC, page 110-112. IEEE, (2020)13.4 A 22nm 1Mb 1024b-Read and Near-Memory-Computing Dual-Mode STT-MRAM Macro with 42.6GB/s Read Bandwidth for Security-Aware Mobile Devices., , , , , , , , , and 2 other author(s). ISSCC, page 224-226. IEEE, (2020)eTag: Tag-Comparison in Memory to Achieve Direct Data Access based on eDRAM to Improve Energy Efficiency of DRAM Cache., , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 64-I (4): 858-868 (2017)A Sub-0.3 V Area-Efficient L-Shaped 7T SRAM With Read Bitline Swing Expansion Schemes Based on Boosted Read-Bitline, Asymmetric-VTH Read-Port, and Offset Cell VDD Biasing Techniques., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 48 (10): 2558-2569 (2013)Noise-Immune Embedded NAND-ROM Using a Dynamic Split Source-Line Scheme for VDDmin and Speed Improvements., , , , , and . IEEE J. Solid State Circuits, 45 (10): 2142-2155 (2010)