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Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier.

, , , and . ESSDERC, page 122-125. IEEE, (2019)

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Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs., , and . ESSDERC, page 230-233. IEEE, (2018)Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier., , , and . ESSDERC, page 122-125. IEEE, (2019)Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference., , , , , and . AICAS, page 1-4. IEEE, (2022)Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology., , , , , , , , , and . ICICDT, page 37-40. IEEE, (2013)Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern., , , , , , and . ESSDERC, page 54-57. IEEE, (2014)Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays., , , , and . IRPS, page 9. IEEE, (2015)Reviewing the Evolution of the NAND Flash Technology., , , , , and . Proc. IEEE, 105 (9): 1609-1633 (2017)Data regeneration and disturb immunity of T-RAM cells., , , , , , , , and . ESSDERC, page 46-49. IEEE, (2014)Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective., , , and . ESSDERC, page 222-225. IEEE, (2019)Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention., , , , and . IRPS, page 1-6. IEEE, (2023)