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Digital Fabrication of Pneumatic Actuators with Integrated Sensing by Machine Knitting.

, , , , , , and . CHI, page 175:1-175:13. ACM, (2022)

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Materials and Technology Issues for the Next Generation of Power Electronic Devices., , , , , and . DRC, page 1-2. IEEE, (2020)Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors., , and . Sensors, 18 (2): 494 (2018)First Demonstration of GaN RF HEMTs on Engineered Substrate., , , , , and . DRC, page 1-2. IEEE, (2023)Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks., , , , , , , and . IRPS, page 2. IEEE, (2015)A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers., , , , , , and . MWSCAS, page 53-56. IEEE, (2012)Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments., , , , , , and . Microelectron. Reliab., (2018)Scaling of InAlN/GaN power transistors., , , , and . ESSDERC, page 314-317. IEEE, (2012)GaN Nanowire Field Emitters with a Self-Aligned Gate Process., , , , , , and . DRC, page 1-2. IEEE, (2020)Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors., , , , , , and . DRC, page 1-2. IEEE, (2020)Performance Estimation of GaN CMOS Technology., , , , , and . DRC, page 1-2. IEEE, (2021)