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A CMOS-compatible boosted transistor having >2× drive current and low leakage current., , , , , , , and . ESSDERC, page 214-217. IEEE, (2016)Gate-All-Around Technology is Coming.: What's Next After GAA?. ISPD, page 81. ACM, (2023)Stress-Aware Design Methodology., , , , and . ISQED, page 807-812. IEEE Computer Society, (2006)3DIC System-Technology Co-Optimization with a Focus on the Interplay of Thermal, Power, Timing, and Stress Effects., , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2024)Technology Inflection Points.. ISPD, page 55. ACM, (2016)A Hybrid Mesh Generation Method for Two and Three Dimensional Simulation of Semiconductor Processes and Devices., , and . IMR, page 159-165. (1998)Transistor design for 5nm and beyond: Slowing down electrons to speed up transistors., , and . ISQED, page 278-283. IEEE, (2016)TCAD modeling for reliability., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2018)Exploring Power Savings of Gate-All-Around Cryogenic Technology., , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Bringing Manufacturing into Design via Process-Dependent SPICE Models., , , , , , , and . ISQED, page 801-806. IEEE Computer Society, (2006)