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Disambiguation of "Quay, Rüdiger"

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X-Band 100-W High-Voltage GaN Internally Matched FET with Low Gain Compression.

, and . IGARSS, page 4617-4620. IEEE, (2023)

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Christine Quay

Ulrich Quay

Rüdiger Quay

Janes Quayson

Edwin Quaynor

 

Other publications of authors with the same name

Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 55 (9-10): 1667-1671 (2015)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 2. IEEE, (2015)Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology., , , , , , , and . Microelectron. Reliab., (2018)Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications., , , , , and . BCICTS, page 288-291. IEEE, (2023)Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress., , , , , , , and . IRPS, page 1-6. IEEE, (2020)A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC., , , and . RWS, page 132-134. IEEE, (2015)Reliability of 70 nm metamorphic HEMTs., , , , , , and . Microelectron. Reliab., 44 (6): 939-943 (2004)Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz., , , , , and . DRC, page 1-2. IEEE, (2024)Multiband Doherty RF power amplifier., , , , , and . AFRICON, page 1-5. IEEE, (2011)Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $f_t=10.2$ GHz., , , , , , and . DRC, page 1-2. IEEE, (2023)