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A 512 Mb Two-Channel Mobile DRAM (OneDRAM) With Shared Memory Array., , , , , , , , , и 5 other автор(ы). IEEE J. Solid State Circuits, 43 (11): 2381-2389 (2008)Quantifying the relationship between the power delivery network and architectural policies in a 3D-stacked memory device., , , , , и . MICRO, стр. 198-209. ACM, (2013)Sensor Array based on Metal Oxide Semiconductors for Detecting Gas Mixtures and Its Sensing Properties., и . SENSORNETS, стр. 169-174. SciTePress, (2016)23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme., , , , , , , , , и 27 other автор(ы). ISSCC, стр. 390-391. IEEE, (2017)Automatic Synthesis of Gate-Level Speed-Independent Control Circuits from Signal Transition Graphs., , , и . ISCAS, стр. 1211-1214. IEEE, (1995)A Hybrid Model for Worm Simulations in a Large Network., , , и . PAISI, том 4430 из Lecture Notes in Computer Science, стр. 301-306. Springer, (2007)Design of High PSRR Bandgap Reference Using Impedance-Splitting Negative-R-Assisted Technique., и . ICECS, стр. 1-4. IEEE, (2023)Addressing service interruptions in memory with thread-to-rank assignment., , , и . ISPASS, стр. 24-35. IEEE Computer Society, (2016)Silicon etching characteristics for the TMAH based solution with additives., и . NEMS, стр. 507-510. IEEE, (2015)A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking., , , , , , , , , и 13 other автор(ы). ISSCC, стр. 496-498. IEEE, (2011)