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Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting., , , , , , и . RTSI, стр. 154-156. IEEE, (2015)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , и . ESSDERC, стр. 389-392. IEEE, (2014)High performance high reliability AlN/GaN DHFET., , , , , , , и . ESSDERC, стр. 146-149. IEEE, (2014)Current crowding as a major cause for InGaN LED degradation at extreme high current density., , , , , и . IECON, стр. 1-6. IEEE, (2021)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-10. IEEE, (2019)Degradation of vertical GaN FETs under gate and drain stress., , , , , , и . IRPS, стр. 4. IEEE, (2018)Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests., , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , и 4 other автор(ы). IRPS, стр. 1-2. IEEE, (2021)Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , и . ESSDERC, стр. 130-133. IEEE, (2017)Modeling challenges for high-efficiency visible light-emitting diodes., , , , , , , , , и 3 other автор(ы). RTSI, стр. 157-160. IEEE, (2015)