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A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory.

, , , , , , , , , , , , , , , , and . VLSIC, page 132-133. IEEE, (2012)

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A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate., , , , , , , , , and 19 other author(s). IEEE J. Solid State Circuits, 51 (1): 204-212 (2016)A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface., , , , , , , , , and 39 other author(s). ISSCC, page 216-218. IEEE, (2019)19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming., , , , , , , , , and 35 other author(s). ISSCC, page 334-335. IEEE, (2014)A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory., , , , , , , , , and 7 other author(s). VLSIC, page 132-133. IEEE, (2012)7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate., , , , , , , , , and 24 other author(s). ISSCC, page 1-3. IEEE, (2015)A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology., , , , , , , , , and 19 other author(s). ISSCC, page 212-213. IEEE, (2011)Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming., , , , , , , , , and 20 other author(s). IEEE J. Solid State Circuits, 50 (1): 204-213 (2015)