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Disambiguation of "Ghibaudo, Gérard"

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Origin of hot carrier degradation in advanced nMOSFET devices.

, , , and . Microelectron. Reliab., 42 (9-11): 1405-1408 (2002)

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Walter Gérard

Gérard Gäfgen

Gérard Sprüssel

Bruno Gérard

Emilie Gérard

 

Other publications of authors with the same name

Electrical noise and RTS fluctuations in advanced CMOS devices., and . Microelectron. Reliab., 42 (4-5): 573-582 (2002)Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices., , , , , , and . Microelectron. Reliab., 43 (9-11): 1433-1438 (2003)Study of forward AC stress degradation of GaN-on-Si Schottky diodes., , , , , , and . Microelectron. Reliab., (2018)In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications., , , , , and . ESSDERC, page 257-260. IEEE, (2022)Challenges and prospects of RF oscillators using silicon resonant tunneling diodes., , , , , , and . ESSCIRC, page 220-223. IEEE, (2009)Noise-induced dynamic variability in nano-scale CMOS SRAM cells., , , , and . ESSDERC, page 256-259. IEEE, (2016)Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations., , , , , , , , , and 3 other author(s). ESSDERC, page 198-201. IEEE, (2013)Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs., , , , , and . ESSDERC, page 214-217. IEEE, (2014)Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment., , , , , , , and . IRPS, page 5. IEEE, (2015)Body effect induced wear-out acceleration in ultra-thin oxides., , , , and . Microelectron. Reliab., 41 (7): 1031-1034 (2001)