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Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology., , , , , , , и . Microelectron. Reliab., (2018)Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices., , , , , , и . IRPS, стр. 6. IEEE, (2018)Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress., , , , , , , и . IRPS, стр. 1-7. IEEE, (2021)Immersive High Quality Communication., и . Eurographics (Short Presentations), Eurographics Association, (1998)Physical failure analysis methods for wide band gap semiconductor devices., , , и . IRPS, стр. 3. IEEE, (2018)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , и 4 other автор(ы). Microelectron. Reliab., 55 (9-10): 1667-1671 (2015)Integrating Agents into Virtual Worlds., , и . Workshop on New Paradigms in Information Visualization and Manipulation, стр. 69-74. ACM, (1997)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , и . Microelectron. Reliab., (2017)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures., , , и . Microelectron. Reliab., 54 (9-10): 1785-1789 (2014)Agents in multi-user virtual environments., , и . Eurographics (Short Presentations), Eurographics Association, (1998)