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High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

, , , , , , , , , и . Microelectron. Reliab., (2017)

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Lucien Hervé

Luis Pablo Hervé Claude

Yves Hervé

Momo Jeufack Hervé

Hervé Chang

 

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High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , и . Microelectron. Reliab., (2017)On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs., , , , , , , , , и 7 other автор(ы). Microelectron. Reliab., (2018)Reliability of high voltage/high power L/S-band Hbt technology., , , , , , , , , и . Microelectron. Reliab., 50 (9-11): 1543-1547 (2010)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , и . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , и 2 other автор(ы). IRPS, стр. 11. IEEE, (2022)Improved thermal management for GaN power electronics: Silver diamond composite packages., , , , , , , , , и . Microelectron. Reliab., 52 (12): 3022-3025 (2012)GaAs Industry in Europe - Technologies, Trends and New Developments., , , и . IEICE Trans. Electron., 91-C (7): 1076-1083 (2008)Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier., , , , , , , , , и 8 other автор(ы). IRPS, стр. 51-1. IEEE, (2022)