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From nanoscale technology scenarios to compact device models for ambipolar devices., , and . ICECS, page 57-61. IEEE, (2010)Characterization and modeling of low-frequency noise in CVD-grown graphene FETs., , , , , , and . ESSDERC, page 176-179. IEEE, (2015)Substrate-coupling effect in BiCMOS technology for millimeter wave applications., , , , , and . NEWCAS, page 1-4. IEEE, (2015)CNTFET Modeling and Reconfigurable Logic-Circuit Design., , , , , , , , , and 2 other author(s). IEEE Trans. Circuits Syst. I Regul. Pap., 54-I (11): 2365-2379 (2007)A class-J power amplifier for 5G applications in 28nm CMOS FD-SOI technology., , and . SBCCI, page 110-113. ACM, (2017)Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation., , , , , and . ESSDERC, page 305-308. IEEE, (2014)TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range., , , and . BCICTS, page 1-4. IEEE, (2019)Electro-Thermal Investigation of SiGe HBTs: A Review., , and . BCICTS, page 44-49. IEEE, (2023)Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance., , , , , , , , , and 1 other author(s). BCICTS, page 1-7. IEEE, (2021)Physics-based electrical compact model for monolayer Graphene FETs., , , , , , and . ESSDERC, page 240-243. IEEE, (2016)