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Training a quantum annealing based restricted Boltzmann machine on cybersecurity data., , , , and . CoRR, (2020)Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI., , , and . ICCD, page 216-221. IEEE, (2006)OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review., , , and . Microelectron. Reliab., 54 (8): 1477-1488 (2014)BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs., , , , and . IRPS, page 6. IEEE, (2018)Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance., , , and . ICCAD, page 730-734. IEEE Computer Society, (2007)A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors., , , , , and . IRPS, page 1-6. IEEE, (2020)Computing Nice Projections of Convex Polyhedra., and . Int. J. Comput. Geom. Appl., 21 (1): 71-85 (2011)High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics., , , , , , , , , and . IRPS, page 9-1. IEEE, (2018)Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing., , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)A new analytical model for high frequency MOSFET noise., , , and . CICC, page 389-392. IEEE, (2001)