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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.

F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella. Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)

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Effects of constant voltage stress on organic complementary logic inverters.N. Wrachien, A. Cester, N. Lago, G. Meneghesso, R. D'Alpaos, A. Stefani, G. Turatti, and M. Muccini. ESSDERC, page 298-301. IEEE, (2014)Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism.J. Iannacci, A. Repchankova, A. Faes, A. Tazzoli, G. Meneghesso, and G. Betta. Microelectron. Reliab., 50 (9-11): 1599-1603 (2010)Full Optical Contactless Thermometry Based on LED Photoluminescence.N. Trivellin, M. Buffolo, C. Santi, M. Meneghini, M. Forzan, F. Dughiero, E. Zanoni, and G. Meneghesso. IEEE Trans. Instrum. Meas., (2021)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, and G. Cellere. IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)Degradation of GaN-on-GaN vertical diodes submitted to high current stress.E. Fabris, M. Meneghini, C. Santi, Z. Hu, W. Li, K. Nomoto, D. Jena, H. Xing, X. Gao, G. Meneghesso and 1 other author(s). Microelectron. Reliab., (2018)DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.G. Verzellesi, G. Meneghesso, A. Chini, E. Zanoni, and C. Canali. Microelectron. Reliab., 45 (9-11): 1585-1592 (2005)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella. Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.A. Viey, W. Vandendaele, M. Jaud, J. Coignus, J. Cluzel, A. Krakovinsky, S. Martin, J. Biscarrat, R. Gwoziecki, V. Sousa and 6 other author(s). IRPS, page 1-8. IEEE, (2021)

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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.

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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.