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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 51 (4): 746-750 (2011)Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing., , , , , , and . IEICE Electron. Express, 3 (13): 316-321 (2006)A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end., , and . IEICE Electron. Express, 12 (7): 20150206 (2015)A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology., , , , , , , , , and 15 other author(s). COOL Chips, page 1-3. IEEE Computer Society, (2014)(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture., , , , , , , , , and . ESSDERC, page 89-92. IEEE, (2012)Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM., , , , , , , , , and . VLSIC, page 86-. IEEE, (2015)A perpetuum mobile 32bit CPU on 65nm SOTB CMOS technology with reverse-body-bias assisted sleep mode., , , , , , and . Hot Chips Symposium, page 1. IEEE, (2014)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM., , , , , , , , , and 8 other author(s). COOL Chips, page 1-3. IEEE Computer Society, (2015)Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT., , , , , , , , and . ESSDERC, page 107-110. IEEE, (2013)