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Disambiguation of "Tsutsui, Kazuo"

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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise.

, , , , , , , , , , , and . Microelectron. Reliab., 51 (4): 746-750 (2011)

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Kenji Tsutsui

Kazuo Inoue

Kazuo Okohira

Kazuo Yajima

Kazuo Araki

 

Other publications of authors with the same name

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)., , , , , , , , , and 12 other author(s). ASICON, page 1137-1140. IEEE, (2017)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT., , , , , , , , and . ESSDERC, page 107-110. IEEE, (2013)Switching of 3300V Scaled IGBT by 5V Gate Drive., , , , , , , , , and 13 other author(s). ASICON, page 1-3. IEEE, (2019)Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors., , , , , , , and . Microelectron. Reliab., (2018)Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 51 (4): 746-750 (2011)Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing., , , , , , and . IEICE Electron. Express, 3 (13): 316-321 (2006)Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately., , , , , , , , , and 8 other author(s). ESSDERC, page 26-29. IEEE, (2018)Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness., , , , , and . Microelectron. Reliab., 50 (3): 332-337 (2010)(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture., , , , , , , , , and . ESSDERC, page 89-92. IEEE, (2012)