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A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology., , , , , , , , , и 27 other автор(ы). ISSCC, стр. 430-432. IEEE, (2012)7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers., , , , , , , , , и 20 other автор(ы). ISSCC, стр. 130-131. IEEE, (2016)256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers., , , , , , , , , и 19 other автор(ы). IEEE J. Solid State Circuits, 52 (1): 210-217 (2017)