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Cross-layer Design for Computing-in-Memory: From Devices, Circuits, to Architectures and Applications.

, , , , , , , and . ASP-DAC, page 132-139. ACM, (2021)

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Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FET., , and . ESSDERC, page 336-339. IEEE, (2022)On the Reliability of In-Memory Computing: Impact of Temperature on Ferroelectric TCAM., , , , , , and . VTS, page 1-6. IEEE, (2021)Reliability-Driven Voltage Optimization for NCFET-based SRAM Memory Banks., , , , and . VTS, page 1-7. IEEE, (2021)HW/SW Codesign for Approximate In-Memory Computing., , and . ISQED, page 1-6. IEEE, (2022)Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs., , , , and . DAC, page 1-6. IEEE, (2023)Impact of Self-Heating on Performance, Power and Reliability in FinFET Technology., , , , , and . ASP-DAC, page 68-73. IEEE, (2020)BTI and HCD Degradation in a Complete 32 × 64 bit SRAM Array - including Sense Amplifiers and Write Drivers - under Processor Activity., , , , , , , , and . IRPS, page 1-7. IEEE, (2020)Tutorial: The Synergy of Hyperdimensional and In-Memory Computing., , and . CODES+ISSS, page 5-6. IEEE, (2023)Impact of Extrinsic Variation Sources on the Device-to-Device Variation in Ferroelectric FET., , , , , and . IRPS, page 1-5. IEEE, (2020)Mitigating the Impact of Variability in NCFET-based Coupled-Oscillator Networks Applications., , , and . ICECS 2022, page 1-4. IEEE, (2022)