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Progress in the physical modeling of carrier illumination, , , , , и . Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 24 (3): 1131--1138 (2006)Comprehensive 300 mm process for Silicon spin qubits with modular integration., , , , , , , , , и 8 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails., , , , , , , , , и 34 other автор(ы). VLSI Technology and Circuits, стр. 284-285. IEEE, (2022)Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning., , , , , , , , , и 30 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)NPN Si/SiGe memory selector with non-linearity>105 and ON-current>6MA/cm2., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 164-167. IEEE, (2023)60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator., , , , , , , и . OFC, стр. 1-3. IEEE, (2021)Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections., , , , , , , , , и 15 other автор(ы). VLSI Technology and Circuits, стр. 330-331. IEEE, (2022)