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Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application., , , , , , , , , и 13 other автор(ы). ESSDERC, стр. 78-81. IEEE, (2018)SRAM read current variability and its dependence on transistor statistics., , , , , , и . CICC, стр. 1-4. IEEE, (2013)MRI-based active shape model of the human proximal femur using fiducial and secondary landmarks and its validation., , , , , , , и . Medical Imaging: Biomedical Applications in Molecular, Structural, and Functional Imaging, том 10578 из SPIE Proceedings, стр. 105781L. SPIE, (2018)Simulation Based Assessment of SRAM Data Retention Voltage., , , , , и . ISQED, стр. 98-103. IEEE, (2019)Analyzing electrical effects of RTA-driven local anneal temperature variation., , , и . ASP-DAC, стр. 739-744. IEEE, (2010)Near-threshold circuit variability in 14nm FinFETs for ultra-low power applications., , , , , , , , , и 2 other автор(ы). ISQED, стр. 258-262. IEEE, (2016)PACS Administrators' and Radiologists' Perspective on the Importance of Features for PACS Selection., , , , и . J. Digital Imaging, 27 (4): 486-495 (2014)Circuit optimization techniques to mitigate the effects of soft errors in combinational logic., , , и . ACM Trans. Design Autom. Electr. Syst., 15 (1): 5:1-5:27 (2009)HTOL SRAM Vmin shift considerations in scaled HKMG technologies., , , , , , , , , и 2 other автор(ы). CICC, стр. 1-4. IEEE, (2014)Domain adaptation for an automated classification of deontic modalities in software engineering contracts., , и . ESEC/SIGSOFT FSE, стр. 1275-1280. ACM, (2021)