Author of the publication

A -247.1 dB FoM, -77.9dBc Reference Spur Ring-Oscillator-Based Injection-Locked Clock Multiplier with Multi-Phase-Based Calibration.

, , , , and . ESSCIRC, page 249-252. IEEE, (2022)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A 0.032mm2 3.1mW synthesized pixel clock generator with 30psrms integrated jitter and 10-to-630MHz DCO tuning range., , , , , and . ISSCC, page 250-251. IEEE, (2013)A 10-Gb/s, 0.03-mm2, 1.28-pJ/bit Half-Rate All-Digital Injection-Locked Clock and Data Recovery with Maximum Timing-Margin Tracking Loop., , , , and . A-SSCC, page 73-76. IEEE, (2018)A 10 Gb/s voltage swing level controlled output driver in 65-nm CMOS technology., and . ISOCC, page 53-56. IEEE, (2012)A 10-Gb/s 6-Vpp differential modulator driver in 65-nm CMOS., , and . ISCAS, page 1869-1872. IEEE, (2014)A Capacitor-Coupled Offset-Canceled Sense Amplifier for DRAMs With Reduced Variation of Decision Threshold Voltage., , , , , and . IEEE J. Solid State Circuits, 55 (8): 2219-2227 (2020)A 27.1 mW, 7.5-to-11.1 Gb/s single-loop referenceless CDR with direct Up/dn control., , and . CICC, page 1-4. IEEE, (2017)A dual-mode direct-conversion CMOS transceiver for Bluetooth and 802.11b., , , , , , , , , and 1 other author(s). ESSCIRC, page 225-228. IEEE, (2003)0.41-pJ/b/dB Asymmetric Simultaneous Bidirectional Transceivers With PAM-4 Forward and PAM-2 Back Channels for 5-m Automotive Camera Link., , , , , and . VLSI Technology and Circuits, page 30-31. IEEE, (2022)A Fully Integrated 700MA Event-Driven Digital Low-Dropout Regulator with Residue-Tracking Loop for Fine-Grained Power Management Unit., and . VLSI Circuits, page 231-232. IEEE, (2018)A 32Gb/s/pin 0.51 pJ/b Single-Ended Resistor-less Impedance-Matched Transmitter with a T-Coil-Based Edge-Boosting Equalizer in 40nm CMOS., , , , , , and . ISSCC, page 410-411. IEEE, (2023)