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Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

, , , , , , and . ESSDERC, page 234-237. IEEE, (2013)

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Statistical NBTI-effect prediction for ULSI circuits., , , and . ISCAS, page 2494-2497. IEEE, (2010)The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations., , and . ESSCIRC, page 93-96. IEEE, (2007)Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability., , , , and . ESSDERC, page 349-352. IEEE, (2014)Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability., , , and . ISCAS, page 577-580. IEEE, (2009)SRAM device and cell co-design considerations in a 14nm SOI FinFET technology., , , , , , , and . ISCAS, page 2339-2342. IEEE, (2013)Statistical aspects of NBTI/PBTI and impact on SRAM yield., , and . DATE, page 1480-1485. IEEE, (2011)Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow., , , , , , , , , and 5 other author(s). ESSDERC, page 238-241. IEEE, (2015)A framework to study time-dependent variability in circuits at sub-35nm technology nodes., , , and . ISCAS, page 1568-1571. IEEE, (2012)The impact of random doping effects on CMOS SRAM cell., , and . ESSCIRC, page 219-222. IEEE, (2004)Probabilistic computing with future deep sub-micrometer devices: a modelling approach., , , , and . ISCAS (3), page 2510-2513. IEEE, (2005)