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Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

X. Wang, B. Cheng, A. Brown, C. Millar, J. Kuang, S. Nassif, and A. Asenov. ESSDERC, page 234-237. IEEE, (2013)

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Xingsheng Zhou

Wang Wang

Linfang Wang

Investigation of the functions of 53BP1 in DNA demethylationL. Wang. Uni Marburg, (2009)

Qingwei Wang

Hao Wang

Other publications of authors with the same name

Capturing intrinsic parameter fluctuations using the PSP compact model.B. Cheng, D. Dideban, N. Moezi, C. Millar, G. Roy, X. Wang, S. Roy, and A. Asenov. DATE, page 650-653. IEEE Computer Society, (2010)Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.X. Wang, B. Cheng, A. Brown, C. Millar, J. Kuang, S. Nassif, and A. Asenov. ESSDERC, page 234-237. IEEE, (2013)Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design.X. Wang, B. Cheng, A. Brown, C. Millar, and A. Asenov. ESSDERC, page 113-116. IEEE, (2012)New reliability mechanisms in memory design for sub-22nm technologies.N. Aymerich, A. Asenov, A. Brown, R. Canal, B. Cheng, J. Figueras, A. González, E. Herrero, S. Markov, M. Miranda and 7 other author(s). IOLTS, page 111-114. IEEE Computer Society, (2011)Electrostatic Characteristics Analysis of Ferroelectric Tunneling Junctions with Different Structures.C. Wang, H. Yu, X. Miao, and X. Wang. ICTA, page 112-113. IEEE, (2020)iPREFER: An Intelligent Parameter Extractor based on Features for BSIM-CMG Models.Z. Peng, Y. Wang, Z. Yuan, and X. Wang. CoRR, (2024)Invited Paper: A Memristor-Based Stateful Majority-Inverter Graph Logic and 1-Bit Full Adder for In-Memory Computing Systems.Z. Gan, D. Zhang, Y. Ma, C. Zhang, X. Miao, and X. Wang. ICTA, page 95-98. IEEE, (2023)SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.B. Cheng, X. Wang, A. Brown, J. Kuang, D. Reid, C. Millar, S. Nassif, and A. Asenov. ISCAS, page 2339-2342. IEEE, (2013)Multi-order Differential Neural Network for TCAD Simulation of the Semiconductor Devices.Z. Cai, A. Huang, Y. Xiong, D. Mu, X. Miao, and X. Wang. DAC, page 198:1-198:6. ACM, (2024)Nanowire transistor solutions for 5nm and beyond.A. Asenov, Y. Wang, B. Cheng, X. Wang, P. Asenov, T. Al-Ameri, and V. Georgiev. ISQED, page 269-274. IEEE, (2016)

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Disambiguation of "Wang, Xingsheng"

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Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

Please choose a person to relate this publication to

Xingsheng Zhou

Wang Wang

Linfang Wang

Qingwei Wang

Hao Wang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Wang, Xingsheng"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

Please choose a person to relate this publication to

Xingsheng Zhou

Wang Wang

Linfang Wang

Qingwei Wang

Hao Wang

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.