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Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation.

Z. Li, B. Zhu, A. Nath, M. Miao, A. Loiseau, Y. Li, J. Johnson, S. Mitra, and R. Gauthier. IRPS, page 1-4. IEEE, (2020)

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Yvan Gauthier

Yvon Gauthier

Gauthier Doquire

Elodie Gauthier

Gauthier Picard

Other publications of authors with the same name

Interoperability for ITS: An Ontology of Learning Style Models.J. McCuaig, and R. Gauthier. ITS, volume 7315 of Lecture Notes in Computer Science, page 671-672. Springer, (2012)A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant.J. Zeng, R. Jain, K. Hwang, and R. Gauthier. IRPS, page 1-4. IEEE, (2019)Reducing the turn-on time and overshoot voltage for a diode-triggered silicon-controlled rectifier during an electrostatic discharge event.A. Ginawi, T. Xia, and R. Gauthier. SoCC, page 109-114. IEEE, (2014)Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation.Z. Li, B. Zhu, A. Nath, M. Miao, A. Loiseau, Y. Li, J. Johnson, S. Mitra, and R. Gauthier. IRPS, page 1-4. IEEE, (2020)Design Optimization of MV-NMOS to Improve Holding Voltage of a 28nm CMOS Technology ESD Power Clamp.S. Karalkar, V. Ganesan, M. Paul, K. Hwang, and R. Gauthier. IRPS, page 1-5. IEEE, (2021)Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology.K. Hwang, S. Karalkar, V. Ganesan, S. Marimuthu, A. Zaka, T. Herrmann, B. Singh, and R. Gauthier. IRPS, page 1-4. IEEE, (2020)Investigation of diode triggered silicon control rectifier turn-on time during ESD events.A. Ginawi, R. Gauthier, and T. Xia. SoCC, page 175-178. IEEE, (2017)Latchup Analysis Using Emission Microscopy.F. Stellari, P. Song, M. McManus, A. Weger, R. Gauthier, K. Chatty, M. Muhammad, P. Sanda, P. Wu, and S. Wilson. Microelectron. Reliab., 43 (9-11): 1603-1608 (2003)Optical and Electrical Testing of Latchup in I/O Interface Circuits.F. Stellari, P. Song, M. McManus, R. Gauthier, A. Weger, K. Chatty, M. Muhammad, and P. Sanda. ITC, page 236-245. IEEE Computer Society, (2003)ESD Protection Design Overview in Advanced SOI and Bulk FinFET Technologies.Y. Li, M. Miao, and R. Gauthier. CICC, page 1-4. IEEE, (2020)

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Disambiguation of "Gauthier, Robert"

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Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation.

Please choose a person to relate this publication to

Yvan Gauthier

Yvon Gauthier

Gauthier Doquire

Elodie Gauthier

Gauthier Picard

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Gauthier, Robert"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation.

Please choose a person to relate this publication to

Yvan Gauthier

Yvon Gauthier

Gauthier Doquire

Elodie Gauthier

Gauthier Picard

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation.