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Disambiguation of "Litta, E. Dentoni"

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Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.

, , , , , , , , , , , , and . ICICDT, page 1-4. IEEE, (2021)

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Henriette Litta

Thore Litta

Heinz Littaur

Charlotte Littauer

Emil Littann

 

Other publications of authors with the same name

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2019)Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections., , , , , , , , , and 15 other author(s). VLSI Technology and Circuits, page 330-331. IEEE, (2022)Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery., , , , , , , , , and 7 other author(s). IRPS, page 1-6. IEEE, (2022)Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails., , , , , , , , , and 34 other author(s). VLSI Technology and Circuits, page 284-285. IEEE, (2022)Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper., , , , , , , , , and 3 other author(s). ICICDT, page 1-4. IEEE, (2021)Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions., , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories., , , , , , , , , and 12 other author(s). VLSI Technology and Circuits, page 306-307. IEEE, (2022)Integration of a Stacked Contact MOL for Monolithic CFET., , , , , , , , , and 13 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning., , , , , , , , , and 30 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET., , , , , , , , , and 11 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)