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Testing Flash Memories for Tunnel Oxide Defects.

, и . VLSI Design, стр. 157-162. IEEE Computer Society, (2008)

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Mohammad Mohammad

Mohammad Reza Mohammad Khorasani

Mohammad Sadeghi

Metallogenic modeling and mineral potential mapping in the Takab district, NW Iran. Uni Halle-Wittenberg, (2009)

Mohammad Djassemi

Mohammad Mehrjouei

 

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A Stimulus-Free Probabilistic Model for Single-Event-Upset Sensitivity., , и . VLSI Design, стр. 100-107. IEEE Computer Society, (2006)Testing Flash Memories for Tunnel Oxide Defects., и . VLSI Design, стр. 157-162. IEEE Computer Society, (2008)Switched positive/negative charge pump design using standard CMOS transistors., , и . IET Circuits Devices Syst., 4 (1): 57-66 (2010)Techniques for Disturb Fault Collapsing., и . J. Electron. Test., 23 (4): 363-368 (2007)Fault model and test procedure for phase change memory.. IET Comput. Digit. Tech., 5 (4): 263-270 (2011)Analysis and test procedures for NOR flash memory defects., и . Microelectron. Reliab., 48 (5): 698-709 (2008)Flash Memory Disturbances: Modeling and Test., и . VTS, стр. 218-224. IEEE Computer Society, (2001)Fault collapsing for flash memory disturb faults., и . ETS, стр. 142-147. IEEE Computer Society, (2005)Frequency assignment problem in satellite communications using differential evolution., , , и . Comput. Oper. Res., 37 (12): 2152-2163 (2010)Switched Polarity Charge Pump for NOR-type Flash Memories., , и . ICECS, стр. 1200-1203. IEEE, (2006)