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Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2021)16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors., , , , , , , , , and 20 other author(s). IMW, page 1-4. IEEE, (2021)1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation., , , , , , , , , and 6 other author(s). MIXDES, page 1-6. IEEE, (2023)Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)., , , , , , , , , and 4 other author(s). IRPS, page 1-8. IEEE, (2023)On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories., , , , , , , , , and 4 other author(s). ESSDERC, page 278-281. IEEE, (2012)Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements., , , , , , , , , and . ESSCIRC, page 125-128. IEEE, (2022)Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization., , , , , , , , , and 4 other author(s). IRPS, page 1-6. IEEE, (2021)1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing., , , , , , , , , and 10 other author(s). IMW, page 1-4. IEEE, (2022)Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes., , , , , , , , , and . IMW, page 1-4. IEEE, (2023)A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications., , , , , , , , and . ESSDERC, page 264-267. IEEE, (2013)