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Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks., , , , , , , , , and . ICECS, page 561-564. IEEE, (2018)16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors., , , , , , , , , and 20 other author(s). IMW, page 1-4. IEEE, (2021)High temperature stability embedded ReRAM for 2x nm node and beyond., , , , , , , , , and 9 other author(s). IMW, page 1-4. IEEE, (2022)Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory., , , , , , , , , and . IRPS, page 1-6. IEEE, (2021)TCAD modeling of performance and reliability of nano-scale memory devices.. Polytechnic University of Milan, Italy, (2014)Innovative GeS2/Sb2Te3 based phase change memory for low power applications., , , , , , , , , and 3 other author(s). NVMTS, page 1-4. IEEE, (2017)Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks., , , , , , , , , and 3 other author(s). ISCAS, page 380-383. IEEE, (2022)Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy., , , , , , and . Adv. Intell. Syst., (2022)Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory., , , , , , , , , and 5 other author(s). ESSDERC, page 117-120. IEEE, (2023)Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability., , , , , , , , , and . IRPS, page 1-6. IEEE, (2023)