( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
High-performance 0.6V VMIN 55nm 1.0Mb 6T SRAM with adaptive BL bleeder.

, , , , , , , , , , , , , , , и . ISCAS, стр. 1831-1834. IEEE, (2012)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Yin-Zu Chen

Jocelyn Ssu-Yin Chen

Lynn Tschun Nien

Wan-Nien Yao

Gia Nien Wu

 

Другие публикации лиц с тем же именем

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell., , , , и . ISLPED, стр. 255-258. ACM, (2014)Evaluation of TFET and FinFET devices and 32-Bit CLA circuits considering work function variation and line-edge roughness., , , , , и . ISCAS, стр. 2325-2328. IEEE, (2015)A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance., , , , , , и . ESSDERC, стр. 157-160. IEEE, (2012)Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications., , , , и . IEEE Trans. Circuits Syst. II Express Briefs, 59-II (12): 878-882 (2012)Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits., , , , , и . Microelectron. Reliab., 54 (4): 698-711 (2014)Exploration and evaluation of low-dropout linear voltage regulator with FinFET, TFET and hybrid TFET-FinFET implementations., , , , и . ISCAS, стр. 1-4. IEEE, (2017)Impacts of single trap induced random telegraph noise on Si and Ge nanowire FETs, 6T SRAM cells and logic circuits., , , , , и . ICICDT, стр. 61-64. IEEE, (2013)Impacts of random telegraph noise on the analog properties of FinFET and trigate devices and Widlar current source., , , , , , и . ICICDT, стр. 1-4. IEEE, (2012)Evaluation of 32-Bit carry-look-ahead adder circuit with hybrid tunneling FET and FinFET devices., , , , , и . ICICDT, стр. 1-4. IEEE, (2015)A comprehensive comparative analysis of FinFET and Trigate device, SRAM and logic circuits., , , , , , и . APCCAS, стр. 463-466. IEEE, (2012)