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Disambiguation of "Bisi, Davide"

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Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

, , , , , , , , , , , , , , , , and . Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)

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Werner Bisinger

Reinhold Bisinger

Peter Bisinger

Hans-Joachim Bisinger

Eustache Bisimis

 

Other publications of authors with the same name

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors., , , , , , , , and . ESSDERC, page 61-64. IEEE, (2013)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , and . IRPS, page 2. IEEE, (2015)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , and . ESSDERC, page 389-392. IEEE, (2014)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs., , , , , , , , , and 7 other author(s). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Short-Circuit Capability with GaN HEMTs : Invited., , , , , , , and . IRPS, page 1-7. IEEE, (2022)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate., , , , , , , , , and . Microelectron. Reliab., (2016)Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects., , , , , , , , , and 3 other author(s). IRPS, page 5. IEEE, (2024)Breakdown investigation in GaN-based MIS-HEMT devices., , , , , , , , , and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)