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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

M. Meneghini, R. Silvestri, S. Dalcanale, D. Bisi, E. Zanoni, G. Meneghesso, P. Vanmeerbeek, A. Banerjee, and P. Moens. IRPS, page 2. IEEE, (2015)

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Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Matteo Rini

Marco Matteo

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Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.A. Stockman, M. Uren, A. Tajalli, M. Meneghini, B. Bakeroot, and P. Moens. ESSDERC, page 130-133. IEEE, (2017)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.A. Viey, W. Vandendaele, M. Jaud, J. Coignus, J. Cluzel, A. Krakovinsky, S. Martin, J. Biscarrat, R. Gwoziecki, V. Sousa and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Modeling challenges for high-efficiency visible light-emitting diodes.F. Bertazzi, S. Dominici, M. Mandurrino, D. Robidas, X. Zhou, M. Vallone, M. Calciati, P. Debernardi, G. Verzellesi, M. Meneghini and 3 other author(s). RTSI, page 157-160. IEEE, (2015)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, and G. Cellere. IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting.N. Trivellin, M. Meneghini, M. Ferretti, D. Barbisan, M. Lago, G. Meneghesso, and E. Zanoni. RTSI, page 154-156. IEEE, (2015)Current crowding as a major cause for InGaN LED degradation at extreme high current density.N. Trivellin, M. Buffolo, C. Santi, E. Zanoni, G. Meneghesso, and M. Meneghini. IECON, page 1-6. IEEE, (2021)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.S. Stoffels, N. Posthuma, S. Decoutere, B. Bakeroot, A. Tallarico, E. Sangiorgi, C. Fiegna, J. Zheng, X. Ma, M. Borga and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.F. Chiocchetta, C. Calascione, C. Santi, C. Sharma, F. Rampazzo, X. Zheng, B. Romanczyk, M. Guidry, H. Li, S. Keller and 4 other author(s). IRPS, page 1-2. IEEE, (2021)

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Disambiguation of "Meneghini, Matteo"

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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Please choose a person to relate this publication to

Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Matteo Rini

Marco Matteo

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Meneghini, Matteo"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Please choose a person to relate this publication to

Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Matteo Rini

Marco Matteo

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
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APA
Chicago
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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.