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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

M. Meneghini, R. Silvestri, S. Dalcanale, D. Bisi, E. Zanoni, G. Meneghesso, P. Vanmeerbeek, A. Banerjee, and P. Moens. IRPS, page 2. IEEE, (2015)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Metzler

Enrico Mönke

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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.M. Meneghini, R. Silvestri, S. Dalcanale, D. Bisi, E. Zanoni, G. Meneghesso, P. Vanmeerbeek, A. Banerjee, and P. Moens. IRPS, page 2. IEEE, (2015)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, and B. Bakeroot. IRPS, page 4. IEEE, (2018)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.F. Chiocchetta, C. Santi, F. Rampazzo, K. Mukherjee, J. Grünenpütt, D. Sommer, H. Blanck, B. Lambert, A. Gerosa, G. Meneghesso and 2 other author(s). IRPS, page 11. IEEE, (2022)Modeling of Substrate Noise Injected by Digital Libraries.S. Zanella, A. Neviani, E. Zanoni, P. Miliozzi, E. Charbon, C. Guardiani, L. Carloni, and A. Sangiovanni-Vincentelli. ISQED, page 488-492. IEEE Computer Society, (2001)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.I. Rossetto, F. Rampazzo, S. Gerardin, M. Meneghini, M. Bagatin, A. Zanandrea, A. Paccagnella, G. Meneghesso, E. Zanoni, C. Dua and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)Charge Trapping in GaN Power Transistors: Challenges and Perspectives.M. Meneghini, N. Modolo, A. Nardo, C. Santi, A. Minetto, L. Sayadi, C. Koller, S. Sicre, G. Prechtl, G. Meneghesso and 1 other author(s). BCICTS, page 1-4. IEEE, (2021)Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs.A. Cavaliere, C. Santi, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 17. IEEE, (2024)Trapping induced parasitic effects in GaN-HEMT for power switching applications.G. Meneghesso, M. Meneghini, E. Zanoni, P. Vanmeerbeek, and P. Moens. ICICDT, page 1-4. IEEE, (2015)Traps localization and analysis in GaN HEMTs.A. Chini, F. Soci, G. Meneghesso, M. Meneghini, and E. Zanoni. Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.A. Stocco, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck, and E. Zanoni. Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)

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Disambiguation of "Zanoni, Enrico"

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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Metzler

Enrico Mönke

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zanoni, Enrico"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Metzler

Enrico Mönke

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.