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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

M. Meneghini, R. Silvestri, S. Dalcanale, D. Bisi, E. Zanoni, G. Meneghesso, P. Vanmeerbeek, A. Banerjee, and P. Moens. IRPS, page 2. IEEE, (2015)

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Horst-Dieter Petermann

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µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, A. Stockman, A. Banerjee, and P. Moens. IRPS, page 1-6. IEEE, (2019)Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.F. Masin, C. Santi, A. Stockman, J. Lettens, F. Geenen, G. Meneghesso, E. Zanoni, P. Moens, and M. Meneghini. IRPS, page 5. IEEE, (2022)Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.A. Stockman, M. Uren, A. Tajalli, M. Meneghini, B. Bakeroot, and P. Moens. ESSDERC, page 130-133. IEEE, (2017)The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study.P. Moens, F. Geenen, L. Schepper, J. Cano, J. Lettens, S. Maslougkas, J. Franchi, and M. Domeij. IRPS, page 1-5. IEEE, (2023)A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability.P. Moens, and A. Stockman. IRPS, page 1-6. IEEE, (2019)High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.A. Fontserè, A. Pérez-Tomás, P. Godignon, J. Millán, J. Parsey, and P. Moens. ESSDERC, page 306-309. IEEE, (2012)Integration of an SCR in an active clamp.K. Reynders, and P. Moens. Microelectron. Reliab., 47 (7): 1054-1059 (2007)Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.F. Masin, M. Meneghini, E. Canato, A. Barbato, C. Santi, A. Stockman, A. Banerjee, P. Moens, E. Zanoni, and G. Meneghesso. IRPS, page 1-4. IEEE, (2020)Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements.A. Marcuzzi, M. Avramenko, C. Santi, P. Moens, F. Geenen, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors.A. Tajalli, E. Canato, A. Nardo, M. Meneghini, A. Stockman, P. Moens, E. Zanoni, and G. Meneghesso. IRPS, page 1-6. IEEE, (2019)

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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Please choose a person to relate this publication to

Tanja Elisabeth Peters

Andre Peters

Jillian Petersen

Robert Martin Peterreins

Horst-Dieter Petermann

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Moens, Peter"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Please choose a person to relate this publication to

Tanja Elisabeth Peters

Andre Peters

Jillian Petersen

Robert Martin Peterreins

Horst-Dieter Petermann

Other publications of authors with the same name

Disambiguation

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URL
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Chicago
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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.