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Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets., , , , , , , , , and 14 other author(s). VLSI Technology and Circuits, page 397-398. IEEE, (2022)Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling., , , , , , , , , and 17 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)External Optical Modulator Using a Low-Cost Fabry-Perot Laser Diode for Optical Access Networks., , , and . OpNeTec, volume 164 of IFIP International Federation for Information Processing, page 459-465. Springer, (2004)The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs., , , , , , , and . IRPS, page 4. IEEE, (2018)High Speed Receiver for Capsule Endoscope., , , , , , , , and . J. Medical Syst., 34 (5): 843-847 (2010)Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector., , , , , , , , , and . IRPS, page 4. IEEE, (2022)Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM., , , , , , , , , and 10 other author(s). IRPS, page 1-5. IEEE, (2023)Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -., , , , , , , , , and 16 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)A wall climbing robot with closed link mechanism., , , , and . IROS, page 2006-2011. IEEE, (2000)A New Concept of Safety Affordance Map for Robots Object Manipulation., , and . RO-MAN, page 565-570. IEEE, (2018)