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Shared fuse macro for multiple embedded memory devices with redundancy., , and . CICC, page 191-194. IEEE, (2001)14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming., , , , , , , and . VLSI Circuits, page 87-88. IEEE, (2018)An On-Chip Self-Repair Calculation and Fusing Methodology., , , , , , and . IEEE Des. Test Comput., 20 (5): 67-75 (2003)Behavioral Modeling of a Charge Trap Transistor One Time Programmable Memory., , , , , , and . NATW, page 1-6. IEEE, (2019)A 45nm SOI compiled embedded DRAM with random cycle times down to 1.3ns., , , , , , , , , and 1 other author(s). CICC, page 1-4. IEEE, (2010)Low Cost Test of High Bandwidth Embedded Memories., , , and . CICC, page 445-448. IEEE, (2006)Generating At-Speed Array Fail Maps with Low-Speed ATE., , and . VTS, page 87-96. IEEE Computer Society, (2004)A 1.0GHz multi-banked embedded DRAM in 65nm CMOS featuring concurrent refresh and hierarchical BIST., , , , , , , , , and 1 other author(s). CICC, page 795-798. IEEE, (2007)A 5.6-ns random cycle 144-Mb DRAM with 1.4 Gb/s/pin and DDR3-SRAM interface., , , , , , and . IEEE J. Solid State Circuits, 38 (11): 1974-1980 (2003)Embedded DRAM design and architecture for the IBM 0.11-µm ASIC offering., , , , , , , , and . IBM J. Res. Dev., 46 (6): 675-690 (2002)